u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 part number: description: BLY93A bjts , si npn power hp" the rf line npn silicon rf power transistor . . . designed primarily for wideband large-signal amplifier stages in the 125-175 mhz frequency range. ? specified 28 volt, 175 mhz characteristics - output power ? 40 watts minimum gain - 7.6 db efficiency = 60% ? characterized from 125 to 175 mhz ? includes series equivalent impedances ?maximum ratings rating symbol value unit collector-emitter voltage vceo 35 vdc collector-sate voltage vcg 65 vdc emitler-base voltage vgb 40 vdc collector current - continuous if- 5.0 adc total device oiuipation ? tc ? 2sc pq 60 wattl oerete above 2sc 342 mw/c operating and storage junction tj,titg -65 10 +200 c ?indicate! jedec regiitered data. 40 w- 175 mhz rf power transistor npn silicon ] j~ ~7?s^-uaat t ( tuimuk^' ? tu 1 mwwah-- ? -^j j -1 ? lu-l ^ ""-- 1 * ' jj \ * r^wf^1^ %^-' pin 1. emitter 2. base 3, emittefl 4. collectdb mm mm max mm mu 8 8.13 8.38 0.320 0.330 i c 17.02 20.07 0.670 0790 i 178 - 0070 j 0.08 0.18 0.003 0007 < l 1.40 1.78 | o.os5 0070 m 45 now 45' nov. t - 1 1.27 - o.oso i r 7s9 780 0299 0307 < s 4.01 4.s2 0.1s9 0.178 t 2.11 2.54 0083 0100 1 u 2.49 3.35 0.091 0132 quality semi-conductors
20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 part number - bly description: 8jt si npn power hp ?electrical characteristics itc - 25c unlei, other?,,, noted, i l characteristic symbol i typ off characteristics collector-emitter breakdown voltage i note 1) (!<;- 200 madc. ib ? 01 collector-emitter breakdown voltage (ic? 200madc. vbe ?oi emitter-base breakdown voltage (lg- 10 madc. ic "0) collector cutoff current ivcb = 30vdc. ie= 01 vibriceo vibrices vibriebo icbo 35 65 4.0 - - - - - - - 1,0 vdc vdc vdc madc on characteristics dc current gain (1c ? 500 madc, vce - 50 vdc) dynamic characteristics output capacitance (vcb ' 30 vdc, ie ? 0. f ? 0 1 to i.omhzl hfe cob functional test common emitter amplifier power gain (figure 1) (pou,? 40 watts, vce * 28 vdc, f - 175mhzl collector efficiency (figure 1) (pou, - 40 watts, vce ? 28 vdc, f * 1 75 mhz! ap6 " 5.0 - 7.6 60 - 45 - 65 - pf 8.1 - - db % note 1 pulsed through 25 mh inductor ?indicates jedec registered data. figure 1-175 mhl test circuit schematic c1.c2.c3.c4 arco 46426 280 pf c5 0.1 iif li v straight #14 awg l2 1 turn *16 awg, 1/4" i.d. l3 0.22 mh quality semi-conductors
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